DRAM Device & Process Integration Engineer

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. As a Process Integration Engineer working in the fast-paced DRAM R&D Memory Group, you will be instrumental in developing Micron's core memory technology critical for AI-enabled customers. The R&D development takes place in an industry-leading 300mm facility which is adjacent to our newly announced Manufacturing facility (currently under construction). Your focus will be on driving front-end process integration for future DRAM technology nodes, owning integration schemes, DOEs, and silicon learning from development through transfer to manufacturing. You will strengthen that work with device and process modeling, using simulation and device physics to build predictive insight, shorten learning cycles, and guide integration decisions. This is an integration role first; modeling is a tool you bring to it, not a standalone assignment. Responsibilities include, but not limited to: Own process integration for assigned DRAM FEOL modules: define integration schemes, drive unit process and module interactions, and deliver on technology node milestones. Design and execute DOEs on silicon, analyze inline, parametric, and yield data, and drive root cause to resolution.