DRAM Pathfinding & Process Integration Engineer
Apply on Micron’s site →Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Join the DRAM Technology Development team at Micron to influence the future of memory technology. Based at the NY CREATES Albany NanoTech Complex, we create breakthrough innovations that drive future DRAM scaling! Our work involves sophisticated patterning, novel materials, new device architectures, and High-NA EUV lithography. You will work with leading equipment suppliers, research institutions, and Micron’s global development teams to solve difficult semiconductor technology problems and guide the strategic direction of memory technology! Position Summary As a DRAM Pathfinding & Process Integration Engineer, you will lead early-phase technology investigation and process integration for next-generation DRAM architectures. You will define structural, electrical, and manufacturability requirements for future memory technologies and translate these requirements into coordinated process solutions. Collaborating with device engineering, lithography, dry etch, thin films, CMP, metrology, modeling, and manufacturing teams, you will assess technology options, speed up learning, and lower technical risk before concepts move into formal development programs.